Anterwell Technology Ltd.
Large Original stock of IC Electronics Components, Transistors, Diodes etc.
High Quality, Reasonable Price, Fast Delivery.
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Drain-source Voltage (DC): | 55 V | Drain-gate Voltage (DC): | 55 V |
---|---|---|---|
Gate-source Voltage (DC): | ±15 V | Peak Drain Current: | 503 A |
Total Power Dissipation: | 253 W | Storage Temperature: | −55 To +175 °C |
High Light: | power mosfet ic,silicon power transistors |
BUK95/9608-55A
TrenchMOS™ logic level FET
Description
N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance.
Product availability:
BUK9508-55A in SOT78 (TO-220AB)
BUK9608-55A in SOT404 (D2-PAK).
Features
■ TrenchMOS™ technology
■ Q101 compliant
■ 175 °C rated
■ Logic level compatible.
Applications
■ Automotive and general purpose power switching:
♦ 12 V and 24 V loads
♦ Motors, lamps and solenoids.
Quick reference data
Symbol | Parameter | Conditions | Typ | Max | Unit |
---|---|---|---|---|---|
VDS | drain-source voltage (DC) | - | 55 | V | |
ID | drain current (DC) | Tmb = 25 °C; VGS = 5 V | - | 125 | A |
Ptot | total power dissipation | Tmb = 25 °C | - | 253 | W |
Tj | - | 175 | °C | ||
RDSon | drain-source on-state resistance | Tj = 25 °C; VGS = 5 V; ID = 25 A | 6.8 | 8 | mΩ |
Tj = 25 °C; VGS = 4.5 V; ID = 25 A | - | 8.5 | mΩ | ||
Tj = 25 °C; VGS = 10 V; ID = 25 A | 6.4 | 7.5 | mΩ |
Simplified outline Symbol
Stock Offer (Hot Sell)
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